Technology development

Odyssey Semiconductor Announces Technology Development Milestones | 2022-03-30 | Press Releases

  • Demonstrates the 700-volt threshold in the company’s lab as part of the development of a vertical GaN device
  • New U.S. Patent Issued – Validation of Novelty and Establishment of Protection for the Company’s Vertical GaN Device Designs

ITHACA, NY/ACCESSWIRE/March 30, 2022/ Odyssey Semiconductor Technologies, Inc. (OTCQB: ODII), a semiconductor device company developing innovative high-voltage vertical power switching components based on proprietary gallium nitride (“GaN”) process technology, announced today having reached a technological milestone in its development of the world’s most advanced vertical GaN power field-effect transistors (FETs).

Global sustainability trends require new technologies and approaches for power conversion in electric vehicles, wind and solar turbines, data centers and industrial motors. The trend away from traditional silicon-based transistors has been going on for more than a decade – silicon can no longer meet the voltage and conversion efficiency demanded. Gallium Nitride (GaN), deployed as a side conductive (or parallel) FET, improves efficiency but does not provide the rated voltage. Silicon carbide (SiC) provides the nominal voltage but lacks efficiency. However, until Odyssey’s recent innovation in vertical GaN, the performance and reliability of these prevalent new approaches fell short.

Odyssey was founded to commercialize vertical GaN FETs. FETs that can provide the conversion efficiency of GaN with the higher voltage rating of SiC. This approach will lead to breakthrough performance for the most demanding applications.

Odyssey has now validated its approach at 700V power rating while delivering industry-leading efficiency with remarkably low on-resistance approaching 1 mOhm-cm2. These devices also exhibit very low gate leakage and can operate in a mode where they are normally “off”. Technology validation can begin on these 700V devices while an extension of the same architecture to the next stage of a power rating of 1200V or better is complete.

Odyssey, with global headquarters in Ithaca, New York, develops this technology in its own manufacturing facility. As the United States needs to bolster domestic semiconductor manufacturing, Odyssey is showing its commitment with its own wafer fab. It also streamlines technology and product development processes through close collaboration between R&D and fab.

The Company also announces today that the United States Patent and Trademark Office has recently approved U.S. Patent 11,251,295, issued February 15and, 2022, regarding key aspects of Odyssey’s vertical GaN technology. The patent is titled “Vertical Field Effect Transistor Device and Method of Manufacture” and relates to a method of manufacturing a high voltage switching device using GaN layers and materials. Odyssey Semiconductor now has two issued US patents and has filed numerous other related claims for the vertical GaN device and related technology.

CEO Commentary

“This 700V milestone validates our industry-leading efficiency and remarkably low on-state resistance. Odyssey is on track to deliver 1200V vertical GaN FETs in 2022 to a handful of customers who have already requested samples engineering. We are delighted that the U.S. Patent and Trademark Office has granted our U.S. patent. This reinforces Odyssey Semiconductor’s leadership position in vertical GaN devices and related technology,” said Rick Brown, co-founder, Acting CEO, CTO and Board Member “Our patent is one of many that will help protect key aspects of Odyssey on our GaN devices.”

“Our goal is to fully protect our GaN devices using both patent rights and trade secrets,” Brown concluded.

About Odyssey Semiconductor Technologies, Inc.

Odyssey Semiconductor Technologies, Inc. (, has developed a proprietary technology designed to enable GaN to replace SiC as the primary high voltage power switching semiconductor material. Based in Ithaca, NY, the company owns and operates a 10,000 square foot semiconductor wafer fabrication facility with a mix of Class 1,000 and Class 10,000 clean space as well as tools for development and the production of advanced semiconductors. Odyssey Semiconductor also offers a world-class semiconductor device foundry and development service.

Investor Relations Contacts:

Darrow Associates

Jeff Christensen

(703) 297-6917

[email protected]

THE SOURCE: Odyssey Semiconductor, Inc.

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