Technology development

MOEA, ITRI and UCLA to Collaborate on Memory Technology Development

As chip sizes continue to shrink, high-performance magnetic random-access memory (MRAM) technology has become mainstream. To advance the development of the next generation of MRAM, the Industrial Technology Research Institute (ITRI) and University of California, Los Angeles (UCLA) have jointly signed a VC-MRAM (Voltage Control Magnetic RAM) cooperation project.

With the support of Taiwan Department of Industrial Technology (DoIT), Ministry of Economic Affairs (MOEA) and the US Defense Advanced Research Projects Agency (DARPA), this collaboration aims to leverage the technical expertise and innovative capacity of both parties to apply from hardware components to memory chips for computing and storage.

According to the DoIT, the MOEA has a long history of investing in the semiconductor industry and has encouraged ITRI in the R&D of Spin-Orbit Torque (SOT) MRAM technology. Based on the achievements, ITRI and UCLA also collaborated on VC-MRAM, which has 50% faster write speed and 75% lower power consumption than SOT-MRAM and is therefore ideal for AIoT and automotive industry applications. The partnership is expected to strengthen the bond between the two parties, accelerate the R&D and industrialization of new memory technologies, and help companies adopt advanced manufacturing processes at an early stage to improve their industrial competitiveness.

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Dr. Chih-I Wu, Vice President and General Manager of Electronics and Optoelectronics Systems Research Laboratories at ITRI, pointed out that the advantages of VC-MRAM, such as fast read/write and low power consumption energy, make it suitable for energy saving and low carbon. emissions applications, presenting a golden opportunity for ITRI’s collaboration with UCLA.

“This is the first time that ITRI has received actual funding from DARPA as part of a cooperative initiative. We believe that our strengths can be combined to further the development of VC-MRAM technology,” he said.

dr. Kang WangEmeritus Professor and Raytheon Chair in Electrical Engineering at UCLA, noted that ITRI, as an internationally renowned applied research institution, has unique and formidable technical expertise and capabilities. It has a solid foundation and strengths in R&D in MRAM technology, and both sides should be able to build on their respective foundations through their cooperation, yielding even more groundbreaking achievements.

Professor at UCLA and Director of the Circuits and Embedded Systems field, Dr. Sudhakar Pamarti said ITRI has platforms and experience in component development and manufacturing verification. By implementing the innovative ideas of UCLA in process development, the development of hardware components will be promoted to related applications. He expects that by early 2023, the advanced technology developed through this cooperation will create an entirely new paradigm in next-generation memory.

ITRI ​​began cultivating MRAM technology years ago, including component innovation, material breakthroughs and circuit optimization, and is poised to meet the demands of fast big data processing. in the era of AI and 5G. This is one of the examples that demonstrates ITRI’s commitment to promoting enabling intelligence technologies and fostering innovative applications. ITRI ​​will continue to partner with industry, academic and research organizations to help industries upgrade their technology, explore new solutions and create new possibilities.